BTS113AE3064NKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 11.5A TO220AB
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BTS113AE3064NKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BTS113AE3064NKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPD90N04S404ATMA1
Vishay Siliconix
SQ3456BEV-T1_GE3
Panjit International Inc.
PJF18N20_T0_00001
Infineon Technologies
IPD60R600E6ATMA1
Panjit International Inc.
PJS6400_S1_00001
Vishay Siliconix
IRF740ASTRLPBF
onsemi
NTMFS4C025NT3G
Alpha & Omega Semiconductor Inc.
AOB29S50L
Infineon Technologies
BSC0804LSATMA1
Alpha & Omega Semiconductor Inc.