BU900TP
STMicroelectronics

STMicroelectronics
TRANS NPN 370V 5A SOT82-3
$0.00
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Reference Price (USD)
4,000+
$0.30450
Exquisite packaging
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Optimize your electronic systems with the BU900TP Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BU900TP delivers superior performance in diverse environments. STMicroelectronics's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Trilinton, Zener Clamp
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 370 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3mA, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 1A, 5V
- Power - Max: 55 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SOT-82
- Supplier Device Package: SOT-82-3