Shopping cart

Subtotal: $0.00

BUK662R4-40C,118

Nexperia USA Inc.
BUK662R4-40C,118 Preview
Nexperia USA Inc.
MOSFET N-CH 40V 120A D2PAK
$0.67
Available to order
Reference Price (USD)
800+
$1.01569
1,600+
$0.93212
2,400+
$0.86783
5,600+
$0.83569
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

STMicroelectronics

STD5N95K5

Infineon Technologies

IRF2807STRRPBF

Nexperia USA Inc.

BUK7675-100A,118

Fairchild Semiconductor

SI3445DV

Microchip Technology

APT60M75JVR

Panjit International Inc.

PJD16P06A-AU_L2_000A1

Alpha & Omega Semiconductor Inc.

AO3413

Infineon Technologies

IMW120R140M1HXKSA1

Top