BUK7107-55ATE,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 55V 75A D2PAK
$1.04
Available to order
Reference Price (USD)
1+
$1.04000
500+
$1.0296
1000+
$1.0192
1500+
$1.0088
2000+
$0.9984
2500+
$0.988
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BUK7107-55ATE,118 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BUK7107-55ATE,118 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 272W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Related Products
Rohm Semiconductor
RF4G100BGTCR
Goford Semiconductor
G2305
STMicroelectronics
STL22N60DM6
Renesas Electronics America Inc
2SK3812-ZP-E1-AZ
Diotec Semiconductor
DI110N03PQ
Renesas Electronics America Inc
UPA1559H(2)-AZ
Micro Commercial Co
MCTL300N10Y-TP
Infineon Technologies
BSS139IXTMA1
Diotec Semiconductor
DI110N04PQ-AQ
Vishay Siliconix