BUK762R9-40E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$0.86900
1,600+
$0.79750
2,400+
$0.74250
5,600+
$0.71500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK762R9-40E,118 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK762R9-40E,118 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 234W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SI7455DP-T1-GE3
Renesas Electronics America Inc
RJK0703DPN-E0#T2
Alpha & Omega Semiconductor Inc.
AON4407L
Infineon Technologies
IRF7452PBF
Infineon Technologies
IRFSL4227PBF
Rohm Semiconductor
RTU002P02T106
Infineon Technologies
IRFR4105ZTRRPBF
Vishay Siliconix
SUP25P10-138-GE3
Infineon Technologies
IRFR2905ZTR
Infineon Technologies