BUK7E2R6-60E,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 120A I2PAK
$0.00
Available to order
Reference Price (USD)
1+
$2.66000
50+
$2.14180
100+
$1.92750
500+
$1.49920
1,000+
$1.24219
Exquisite packaging
Discount
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The BUK7E2R6-60E,127 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK7E2R6-60E,127 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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