BUK7S2R0-40HJ
Nexperia USA Inc.
Nexperia USA Inc.
BUK7S2R0-40H/SOT1235/LFPAK88
$2.69
Available to order
Reference Price (USD)
1+
$2.69000
500+
$2.6631
1000+
$2.6362
1500+
$2.6093
2000+
$2.5824
2500+
$2.5555
Exquisite packaging
Discount
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Enhance your electronic projects with the BUK7S2R0-40HJ single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s BUK7S2R0-40HJ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 183W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
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