DMT64M1LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.45
Available to order
Reference Price (USD)
1+
$0.44706
500+
$0.4425894
1000+
$0.4381188
1500+
$0.4336482
2000+
$0.4291776
2500+
$0.424707
Exquisite packaging
Discount
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Optimize your power electronics with the DMT64M1LPSW-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMT64M1LPSW-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 81.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.14W (Ta), 44W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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