BUZ32
Harris Corporation
Harris Corporation
MOSFET N-CH 200V 9.5A TO220AB
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
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Discover the BUZ32 from Harris Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BUZ32 ensures reliable performance in demanding environments. Upgrade your circuit designs with Harris Corporation's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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