BYVB32-50-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 50V 18A TO263AB
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
Exquisite packaging
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Meet the BYVB32-50-E3/81 - Vishay General Semiconductor - Diodes Division's advanced solution in the Diodes - Rectifiers - Arrays segment. This high-speed rectifier array boasts ultra-low recovery time, significantly reducing power loss in switching applications. From server power supplies to LED lighting drivers and electric vehicle charging stations, this component ensures energy-efficient operation. Vishay General Semiconductor - Diodes Division combines innovative silicon technology with rigorous testing to deliver diode arrays that outperform in reliability and thermal management.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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