BZD27B56P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27B56P-HE3-18 from Vishay General Semiconductor - Diodes Division is a high-performance Zener diode designed for precision voltage regulation in various electronic circuits. As part of the Discrete Semiconductor Products category, this single Zener diode offers exceptional stability and reliability, making it ideal for applications requiring consistent voltage reference. Key features include low impedance, sharp breakdown characteristics, and excellent temperature stability. These diodes are widely used in power supplies, voltage clippers, and surge protectors. For instance, the BZD27B56P-HE3-18 is commonly employed in automotive electronics, telecommunications equipment, and industrial control systems to ensure stable voltage levels and protect sensitive components from voltage spikes.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 56 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 43 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Comchip Technology
ACZRA4760-HF
Nexperia USA Inc.
BZV85-C18,133
Microchip Technology
JAN1N4101-1
Microchip Technology
JANS1N4486US/TR
Vishay General Semiconductor - Diodes Division
TZMC51-GS08
Microchip Technology
JANTX1N5527DUR-1/TR
Solid State Inc.
1N3034B
Microchip Technology
1N4931A
Microchip Technology
JAN1N3825A-1/TR
onsemi