BZX384C9V1-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 200MW SOD323
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03213
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZX384C9V1-HE3-18 by Vishay General Semiconductor - Diodes Division is a premium single Zener diode, part of the Discrete Semiconductor Products range. This diode is crafted for precision and reliability, offering features like excellent temperature stability and low reverse leakage current. It is ideal for applications requiring consistent voltage regulation, such as in power supplies for LED lighting and audio amplifiers. The BZX384C9V1-HE3-18 is also a key component in telecommunications infrastructure, where it maintains signal integrity by stabilizing voltage levels. Furthermore, it is used in renewable energy systems, such as solar panels and wind turbines, to protect against voltage spikes and ensure efficient energy conversion.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
Related Products
Vishay General Semiconductor - Diodes Division
PLZ2V2B-HG3_A/H
Vishay General Semiconductor - Diodes Division
BZT52C51-G3-08
Microchip Technology
1N5920AP/TR8
Vishay General Semiconductor - Diodes Division
SMBZ5933B-E3/5B
Vishay General Semiconductor - Diodes Division
BZG03C91-M3-08
Microchip Technology
CDLL5523BE3
Microchip Technology
JANTX1N4112C-1/TR
Taiwan Semiconductor Corporation
BZX85C5V1 R0G
Vishay General Semiconductor - Diodes Division
BZX884B30L-HG3-08
Panjit International Inc.