C2M0025120D
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 1200V 90A TO247-3
$81.14
Available to order
Reference Price (USD)
1+
$73.29000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the C2M0025120D by Wolfspeed, Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The C2M0025120D stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Wolfspeed, Inc..
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 463W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
IXYS
IXTQ60N20L2
STMicroelectronics
STFI31N65M5
onsemi
NTMYS010N04CLTWG
STMicroelectronics
STF5N62K3
Diodes Incorporated
DMT615MLFV-7
Fairchild Semiconductor
2N7002MTF
Diodes Incorporated
DMP2110UQ-13
Vishay Siliconix
SI1401EDH-T1-BE3
Rohm Semiconductor
RD3U041AAFRATL
Goford Semiconductor