CDM2206-800LR
Central Semiconductor Corp
Central Semiconductor Corp
MOSFET N-CH 800V 6A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CDM2206-800LR by Central Semiconductor Corp is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Central Semiconductor Corp for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
- Vgs (Max): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 474.7 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
IXYS
IXFD26N60Q-8XQ
Rohm Semiconductor
RSY500N04FRATL
Microsemi Corporation
JAN2N7228U
Infineon Technologies
IRLML0100TRPBF-1
Infineon Technologies
BSC130P03LS G
Renesas Electronics America Inc
RJK5034DPP-A0#T2
Renesas Electronics America Inc
UPA2394T1P-E1-A#YK1
Infineon Technologies
IMT65R072M1HXTMA1
Honeywell Aerospace
HTNFET-DC
Harris Corporation