CPV362M4F
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 8.8A 23W IMS-2
$0.00
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Reference Price (USD)
160+
$33.35000
Exquisite packaging
Discount
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's CPV362M4F IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The CPV362M4F offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the CPV362M4F in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the CPV362M4F IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8.8 A
- Power - Max: 23 W
- Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 340 pF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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