CSD16321Q5T
Texas Instruments
Texas Instruments
25-V, N CHANNEL NEXFET POWER MOS
$2.11
Available to order
Reference Price (USD)
1+
$2.11000
500+
$2.0889
1000+
$2.0678
1500+
$2.0467
2000+
$2.0256
2500+
$2.0045
Exquisite packaging
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Enhance your electronic projects with the CSD16321Q5T single MOSFET from Texas Instruments. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Texas Instruments's CSD16321Q5T for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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