IMW65R027M1HXKSA1
Infineon Technologies
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
$28.06
Available to order
Reference Price (USD)
1+
$28.06000
500+
$27.7794
1000+
$27.4988
1500+
$27.2182
2000+
$26.9376
2500+
$26.657
Exquisite packaging
Discount
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Upgrade your designs with the IMW65R027M1HXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IMW65R027M1HXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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