CSD23202W10T
Texas Instruments
Texas Instruments
MOSFET P-CH 12V 2.2A 4DSBGA
$1.05
Available to order
Reference Price (USD)
250+
$0.28092
500+
$0.23850
750+
$0.20671
1,250+
$0.18550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CSD23202W10T from Texas Instruments sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Texas Instruments's CSD23202W10T for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DSBGA (1x1)
- Package / Case: 4-UFBGA, DSBGA
Related Products
STMicroelectronics
STP18NM60ND
Nexperia USA Inc.
PSMN3R9-60PSQ
Renesas Electronics America Inc
N0413N-ZK-E1-AY
Infineon Technologies
IPU80R600P7AKMA1
onsemi
FDPF3860T
Vishay Siliconix
IRF9Z14SPBF
Infineon Technologies
IPP50R199CPXK
Infineon Technologies
IPP120P04P4L03AKSA2
onsemi
MGSF3442XT1
Sanyo