N0413N-ZK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 100A TO263
$1.23
Available to order
Reference Price (USD)
1+
$1.23200
500+
$1.21968
1000+
$1.20736
1500+
$1.19504
2000+
$1.18272
2500+
$1.1704
Exquisite packaging
Discount
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Enhance your electronic projects with the N0413N-ZK-E1-AY single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's N0413N-ZK-E1-AY for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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