CSD23203WT
Texas Instruments
Texas Instruments
MOSFET P-CH 8V 3A 6DSBGA
$1.15
Available to order
Reference Price (USD)
1+
$1.15000
500+
$1.1385
1000+
$1.127
1500+
$1.1155
2000+
$1.104
2500+
$1.0925
Exquisite packaging
Discount
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The CSD23203WT by Texas Instruments is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Texas Instruments for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA (1x1.5)
- Package / Case: 6-UFBGA, DSBGA
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