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IXTA1N200P3HV

IXYS
IXTA1N200P3HV Preview
IXYS
MOSFET N-CH 2000V 1A TO263
$9.58
Available to order
Reference Price (USD)
1+
$6.58000
50+
$5.39160
100+
$4.86550
500+
$4.07650
1,000+
$3.68200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2000 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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