DCX114YUQ-13-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.08
Available to order
Reference Price (USD)
1+
$0.07615
500+
$0.0753885
1000+
$0.074627
1500+
$0.0738655
2000+
$0.073104
2500+
$0.0723425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DCX114YUQ-13-F from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the DCX114YUQ-13-F ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Diodes Incorporated's DCX114YUQ-13-F delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Toshiba Semiconductor and Storage
RN1910,LF(CT
onsemi
NSBC124EPDXV6T1G
Infineon Technologies
BCR133SH6433XTMA1
Toshiba Semiconductor and Storage
RN2511(TE85L,F)
Diodes Incorporated
DDC114YU-7-F
Infineon Technologies
BCR135SH6327XTSA1
NXP USA Inc.
PBLS2002S,115
onsemi
NSVMUN5314DW1T3G
Nexperia USA Inc.
PUMH24,115
Rohm Semiconductor