PBLS2002S,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN PREBIAS/PNP 1.5W 8SO
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PBLS2002S,115 by NXP USA Inc. is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. NXP USA Inc.'s state-of-the-art production facilities ensure that the PBLS2002S,115 delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max): 50V, 20V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 100MHz
- Power - Max: 1.5W
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
onsemi
NSVMUN5314DW1T3G
Nexperia USA Inc.
PUMH24,115
Rohm Semiconductor
UMH2NFHATN
Rohm Semiconductor
UMD22NTR
Toshiba Semiconductor and Storage
RN1964TE85LF
Rohm Semiconductor
UMF28NTR
onsemi
MUN5314DW1T1G
onsemi
NSBA123TDP6T5G
Panasonic Electronic Components
XP0421200L
Toshiba Semiconductor and Storage