DCX114YUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.07
Available to order
Reference Price (USD)
1+
$0.07123
500+
$0.0705177
1000+
$0.0698054
1500+
$0.0690931
2000+
$0.0683808
2500+
$0.0676685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the DCX114YUQ-7-F by Diodes Incorporated, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the DCX114YUQ-7-F excels in automotive systems, power management modules, and communication devices. Diodes Incorporated's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose DCX114YUQ-7-F for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
onsemi
NSBC114TDXV6T1
onsemi
MUN5114DW1T1
onsemi
NSVBC114YPDXV6T1G
Diodes Incorporated
DDC114YH-7
Toshiba Semiconductor and Storage
RN2901,LF(CT
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
onsemi
UMA4NT1
Rohm Semiconductor
EMH1FHAT2R
Diodes Incorporated
DDC144TU-7
onsemi