NSBA114TDXV6T1
onsemi
onsemi
TRANS 2PNP PREBIAS 0.5W SOT563
$0.04
Available to order
Reference Price (USD)
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$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
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Upgrade your electronic designs with the NSBA114TDXV6T1 by onsemi, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the NSBA114TDXV6T1 excels in automotive systems, power management modules, and communication devices. onsemi's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose NSBA114TDXV6T1 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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