DDA123JU-7
Diodes Incorporated
Diodes Incorporated
TRANS 2PNP PREBIAS 0.2W SOT363
$0.42
Available to order
Reference Price (USD)
30,000+
$0.10080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the DDA123JU-7 by Diodes Incorporated, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the DDA123JU-7 excels in automotive systems, power management modules, and communication devices. Diodes Incorporated's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose DDA123JU-7 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Nexperia USA Inc.
PBLS4004Y,115
onsemi
NSVUMC2NT1G
onsemi
NSVMUN5211DW1T3G
Toshiba Semiconductor and Storage
RN2704,LF
Toshiba Semiconductor and Storage
RN2905FE,LXHF(CT
Toshiba Semiconductor and Storage
RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN4984(T5L,F,T)
Nexperia USA Inc.
PEMD2,315
Toshiba Semiconductor and Storage
RN2904,LF(CT
Rohm Semiconductor