DDC114EUQ-13-F
Diodes Incorporated

Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.06
Available to order
Reference Price (USD)
1+
$0.06241
500+
$0.0617859
1000+
$0.0611618
1500+
$0.0605377
2000+
$0.0599136
2500+
$0.0592895
Exquisite packaging
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Introducing Diodes Incorporated's DDC114EUQ-13-F, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Diodes Incorporated's dedication to excellence ensures that the DDC114EUQ-13-F meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363