MUN5234DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.04
Available to order
Reference Price (USD)
1+
$0.04494
500+
$0.0444906
1000+
$0.0440412
1500+
$0.0435918
2000+
$0.0431424
2500+
$0.042693
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MUN5234DW1T1G by onsemi is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. onsemi's MUN5234DW1T1G is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
onsemi
NSBC143EDXV6T1
Rohm Semiconductor
EMD2FHAT2R
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Nexperia USA Inc.
PRMD10Z
onsemi
NSBC123JDXV6T5
onsemi
MUN5113DW1T1G
Rohm Semiconductor
EMH10FHAT2R
Nexperia USA Inc.
PUMD9,115
Toshiba Semiconductor and Storage
RN2907FE,LF(CT
onsemi