DDTC113TKA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDTC113TKA-7-F from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Diodes Incorporated's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
Related Products
Rohm Semiconductor
DTA143TEBTL
Panasonic Electronic Components
DRC3115G0L
onsemi
FJN3308RBU
NXP USA Inc.
PBRN113ES,126
Panasonic Electronic Components
UNR412400A
Panasonic Electronic Components
UNR521L00L
Infineon Technologies
BCR 146F E6327
Panasonic Electronic Components
UNR321000L
Infineon Technologies
BCR 192T E6327
Panasonic Electronic Components