Shopping cart

Subtotal: $0.00

DDTD122JU-7-F

Diodes Incorporated
DDTD122JU-7-F Preview
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 220 Ohms
  • Resistor - Emitter Base (R2): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323

Related Products

Panasonic Electronic Components

UNR51A6G0L

Toshiba Semiconductor and Storage

RN2111CT(TPL3)

NXP USA Inc.

PDTA144WS,126

Panasonic Electronic Components

UNR511100L

Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

Toshiba Semiconductor and Storage

RN1111ACT(TPL3)

Rohm Semiconductor

DTC144EEBHZGTL

Panasonic Electronic Components

UNR52A0G0L

Infineon Technologies

BCR 133 B6327

Top