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RN2108ACT(TPL3)

Toshiba Semiconductor and Storage
RN2108ACT(TPL3) Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.08A CST3
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Specifications

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3

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