DF120R12W2H3B27BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 50A 180W
$51.28
Available to order
Reference Price (USD)
15+
$55.36000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DF120R12W2H3B27BOMA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the DF120R12W2H3B27BOMA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the DF120R12W2H3B27BOMA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 180 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FD300R07PE4B6BOSA1
Infineon Technologies
FF200R12KE4PHOSA1
Infineon Technologies
FS300R12KE3BOSA1
Infineon Technologies
FF100R12KS4HOSA1
Infineon Technologies
FP75R06KE3BOSA1
Infineon Technologies
FF650R17IE4BOSA1
Microchip Technology
APTGT100DA60T1G
Infineon Technologies
FF600R12KE4EBOSA1
Infineon Technologies
FS500R17OE4DBOSA1
Infineon Technologies