DF80R12W2H3_B11
Infineon Technologies
Infineon Technologies
IGBT MODULE VCES 1200V 160A
$0.00
Available to order
Reference Price (USD)
15+
$45.50000
Exquisite packaging
Discount
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The DF80R12W2H3_B11 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the DF80R12W2H3_B11 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every DF80R12W2H3_B11 module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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