VS-GB150TH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 300A INT-A-PAK
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Reference Price (USD)
12+
$422.51833
Exquisite packaging
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Optimize your power systems with Vishay General Semiconductor - Diodes Division's VS-GB150TH120N, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The VS-GB150TH120N is particularly effective in high-ambient-temperature environments like steel mill drives. Vishay General Semiconductor - Diodes Division brings decades of semiconductor expertise to every VS-GB150TH120N module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1008 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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