DMG2302UKQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 2.8A SOT23 T&R 3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.21869
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG2302UKQ-7 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMG2302UKQ-7 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SI7192DP-T1-GE3
EPC
EPC2007C
onsemi
NVMFS6H836NLT1G
Infineon Technologies
AUIRF6215S
Renesas Electronics America Inc
RJK0703DPN-A0#T2
Infineon Technologies
IAUC120N04S6L009ATMA1
onsemi
FQP7P06
IXYS
IXFH12N90P
IXYS
IXTK22N100L
Rohm Semiconductor