DMG4800LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10A TO252-3
$0.63
Available to order
Reference Price (USD)
2,500+
$0.23812
5,000+
$0.22438
12,500+
$0.21062
25,000+
$0.20100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMG4800LK3-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMG4800LK3-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.71W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPDD60R170CFD7XTMA1
Infineon Technologies
IRF60R217
Infineon Technologies
BSC012N06NSATMA1
onsemi
NTMFS3D6N10MCLT1G
Fairchild Semiconductor
ISL9N310AD3ST_NL
Vishay Siliconix
SIR440DP-T1-GE3
onsemi
SCH1331-S-TL-H
Toshiba Semiconductor and Storage
TPH3R70APL,L1Q
Nexperia USA Inc.
PMPB20XNEA,115
Infineon Technologies