DMG4800LSDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SO-8 T&R 2
$0.26
Available to order
Reference Price (USD)
1+
$0.25536
500+
$0.2528064
1000+
$0.2502528
1500+
$0.2476992
2000+
$0.2451456
2500+
$0.242592
Exquisite packaging
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Discover the high-performance DMG4800LSDQ-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMG4800LSDQ-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
- Power - Max: 1.17W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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