DMG8N65SCT
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 650V 8A TO220AB
$0.00
Available to order
Reference Price (USD)
50+
$1.35320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG8N65SCT from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMG8N65SCT for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1217 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRFR18N15DPBF
Vishay Siliconix
IRFBC30L
Infineon Technologies
IRF9Z24NSPBF
Diodes Incorporated
DMP3120L-7
onsemi
NTMFS4897NFT1G
Infineon Technologies
IRF9Z34NLPBF
Fairchild Semiconductor
RFD16N05SM_NL
Vishay Siliconix
SIR496DP-T1-GE3
STMicroelectronics
STD1NK80Z-1
onsemi