DMJ70H1D4SJ3
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 651V~800V TO251 TU
$1.17
Available to order
Reference Price (USD)
1+
$1.17253
500+
$1.1608047
1000+
$1.1490794
1500+
$1.1373541
2000+
$1.1256288
2500+
$1.1139035
Exquisite packaging
Discount
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The DMJ70H1D4SJ3 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMJ70H1D4SJ3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (Type TH)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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