GT52N10D5
Goford Semiconductor
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
$1.64
Available to order
Reference Price (USD)
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$1.64000
500+
$1.6236
1000+
$1.6072
1500+
$1.5908
2000+
$1.5744
2500+
$1.558
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Discover the GT52N10D5 from Goford Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the GT52N10D5 ensures reliable performance in demanding environments. Upgrade your circuit designs with Goford Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5.2x5.86)
- Package / Case: 8-PowerTDFN
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