DMN10H700S-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 700MA SOT23
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08976
6,000+
$0.08153
15,000+
$0.07330
30,000+
$0.06919
75,000+
$0.06220
150,000+
$0.06014
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMN10H700S-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN10H700S-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IPD60R280CFD7ATMA1
STMicroelectronics
STD45NF75T4
Infineon Technologies
BSP88H6327XTSA1
STMicroelectronics
STF2HNK60Z
Panjit International Inc.
PJC7406_R1_00001
EPC
EPC2034C
Nexperia USA Inc.
PMH1200UPEH
Vishay Siliconix
IRF9Z30PBF
Rohm Semiconductor
RS1E281BNTB1
Fairchild Semiconductor