IRF9Z30PBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 50V 18A TO220AB
$2.74
Available to order
Reference Price (USD)
1+
$2.34000
50+
$1.89700
100+
$1.71400
500+
$1.34784
1,000+
$1.12819
2,500+
$1.05498
5,000+
$1.01837
Exquisite packaging
Discount
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Meet the IRF9Z30PBF by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF9Z30PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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