DMN2014LHAB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2030-6
$0.18
Available to order
Reference Price (USD)
1+
$0.17685
500+
$0.1750815
1000+
$0.173313
1500+
$0.1715445
2000+
$0.169776
2500+
$0.1680075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the DMN2014LHAB-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMN2014LHAB-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Power - Max: 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
Related Products
Fairchild Semiconductor
IRF630A_CP001
Diodes Incorporated
DMN65D8LDWQ-13
Fairchild Semiconductor
FDMC0222
Renesas Electronics America Inc
FS50KM-2-AX#204
Alpha & Omega Semiconductor Inc.
AOC3870A
Microchip Technology
APTM20HM08FG
NXP USA Inc.
MRF6V2300NBR5,578
onsemi
VEC2415-TL-W-Z
Micro Commercial Co
BSS8402DW-TP
Rohm Semiconductor