HS8MA2TCR1
Rohm Semiconductor
Rohm Semiconductor
30V DUAL COMMON DRAIN PCH+NCH PO
$1.11
Available to order
Reference Price (USD)
1+
$1.11000
500+
$1.0989
1000+
$1.0878
1500+
$1.0767
2000+
$1.0656
2500+
$1.0545
Exquisite packaging
Discount
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Choose the HS8MA2TCR1 from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the HS8MA2TCR1 stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: DFN3333-9DC
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