DMN2019UTS-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 5.4A TSSOP-8
$0.44
Available to order
Reference Price (USD)
2,500+
$0.17329
5,000+
$0.16383
12,500+
$0.15437
25,000+
$0.14302
62,500+
$0.13829
Exquisite packaging
Discount
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The DMN2019UTS-13 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN2019UTS-13 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 780mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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