DMN2053UWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.08734
500+
$0.0864666
1000+
$0.0855932
1500+
$0.0847198
2000+
$0.0838464
2500+
$0.082973
Exquisite packaging
Discount
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The DMN2053UWQ-7 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMN2053UWQ-7 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.9A (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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