IPWS65R022CFD7AXKSA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO247-3
$25.41
Available to order
Reference Price (USD)
1+
$25.40579
500+
$25.1517321
1000+
$24.8976742
1500+
$24.6436163
2000+
$24.3895584
2500+
$24.1355005
Exquisite packaging
Discount
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The IPWS65R022CFD7AXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPWS65R022CFD7AXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-31
- Package / Case: TO-247-3
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