DMN2055UWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.08734
500+
$0.0864666
1000+
$0.0855932
1500+
$0.0847198
2000+
$0.0838464
2500+
$0.082973
Exquisite packaging
Discount
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Meet the DMN2055UWQ-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN2055UWQ-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 520mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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