IGT60R070D1ATMA4
Infineon Technologies
Infineon Technologies
GANFET N-CH
$25.43
Available to order
Reference Price (USD)
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$25.43000
500+
$25.1757
1000+
$24.9214
1500+
$24.6671
2000+
$24.4128
2500+
$24.1585
Exquisite packaging
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Discover the IGT60R070D1ATMA4 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IGT60R070D1ATMA4 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN
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