DMN3022LDG-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
$0.43
Available to order
Reference Price (USD)
3,000+
$0.44337
Exquisite packaging
Discount
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Choose the DMN3022LDG-7 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMN3022LDG-7 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
- Power - Max: 1.96W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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